Gate control circuit

ABSTRACT

An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.

CROSS REFERENCE TO OTHER APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 13/189,397 entitled GATE CONTROL CIRCUIT filed Jul. 22, 2011which is incorporated herein by reference for all purposes, which is acontinuation of U.S. Pat. No. 8,008,953 entitled GATE CONTROL CIRCUITfiled Nov. 4, 2009, which is incorporated herein by reference for allpurposes, which claims priority to U.S. Provisional Patent ApplicationNo. 61/198,707 entitled FET GATE DRIVER filed Nov. 7, 2008, which isincorporated herein by reference for all purposes.

BACKGROUND OF THE INVENTION

Various power management techniques are employed in systems in order tominimize power consumption and consequently conserve energy and prolongbattery life. Improved techniques for power conservation are useful sothat systems can meet more stringent energy conservation requirements.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention are disclosed in the followingdetailed description and the accompanying drawings.

FIG. 1 is a block diagram illustrating an embodiment of a power systemof a notebook computer.

FIG. 2 is a circuit diagram illustrating typical circuitry used toperform sleep state 3 power rail switching in a notebook computer.

FIG. 3A is a high level functional block diagram of an embodiment of agate control circuit.

FIG. 3B is a high level functional block diagram of an embodiment of agate control circuit.

FIG. 3C is a high level functional block diagram of an embodiment of agate control circuit.

FIG. 4 is a high level functional block diagram of an embodiment of agate control circuit.

FIG. 5 is a high level functional block diagram of an embodiment of aplurality of gate control circuits daisy chained together.

FIG. 6 is a high level functional block diagram of an embodiment of aportion of timing and logic circuitry of a gate control circuit.

FIG. 7A is a high level functional block diagram of an embodiment of anintegrated circuit that includes both a gate control circuit and the FETthat it controls.

FIG. 7B illustrates an embodiment of the manner in which two die, a FETand a gate control circuit, are packaged in the same chip.

DETAILED DESCRIPTION

The invention can be implemented in numerous ways, including as aprocess; an apparatus; a system; a composition of matter; a computerprogram product embodied on a computer readable storage medium; and/or aprocessor, such as a processor configured to execute instructions storedon and/or provided by a memory coupled to the processor. In thisspecification, these implementations, or any other form that theinvention may take, may be referred to as techniques. In general, theorder of the steps of disclosed processes may be altered within thescope of the invention. Unless stated otherwise, a component such as aprocessor or a memory described as being configured to perform a taskmay be implemented as a general component that is temporarily configuredto perform the task at a given time or a specific component that ismanufactured to perform the task. As used herein, the term ‘processor’refers to one or more devices, circuits, and/or processing coresconfigured to process data, such as computer program instructions.

A detailed description of one or more embodiments of the invention isprovided below along with accompanying figures that illustrate theprinciples of the invention. The invention is described in connectionwith such embodiments, but the invention is not limited to anyembodiment. The scope of the invention is limited only by the claims,and the invention encompasses numerous alternatives, modifications, andequivalents. Numerous specific details are set forth in the followingdescription in order to provide a thorough understanding of theinvention. These details are provided for the purpose of example, andthe invention may be practiced according to the claims without some orall of these specific details. For the purpose of clarity, technicalmaterial that is known in the technical fields related to the inventionhas not been described in detail so that the invention is notunnecessarily obscured.

Power savings policies are typically employed in computer systems anddictate the manner in which various facilities of a computer system areplaced into and brought out of sleep states based on user and/orapplication activity. For example, the Advanced Configuration and PowerInterface (ACPI) specification provides a comprehensive regime definingpower management in computer systems and is often employed as anindustry standard for power management. During periods of inactivity,various functions and their corresponding components are turned orpowered off and/or placed into appropriate sleep states. When activitylevels increase, these components must be quickly turned back on butturned on in a controlled manner to minimize perturbations and noise inthe system.

FIG. 1 is a block diagram illustrating an embodiment of at least aportion of a power system 100 of a notebook computer. As depicted, a 12Vbus emanating from battery/charger 102 is stepped down by DC to DCconverters 104 to source operating voltages required by components onthe motherboard. In the given example, power rails 106 provide operatingvoltages of 5V, 3.3V, 1.5V, and 12V. The appropriate power rails 106 areconnected to various circuit groups 108 via power rail switches 110.During an active or on-state of a circuit group, the power rail switchescorresponding to the power rails needed by the circuit group areswitched on so that the appropriate power rails are connected to thecircuit group. However, during an inactive or sleep state of a circuitgroup, the power rail switches corresponding to the power rails notcurrently needed by the circuit group are switched off to disconnect thepower rails from the circuit group so that power consumption can bereduced. Appropriately switching the various power rail switches off andon as various system components are put into and brought out of sleepstates is managed by higher level system functions such as the operatingsystem and executed by a sleep state control microcontroller 112. Asillustrated in the given example, microcontroller 112 outputs varioussleep state signals to control power rail switches 110. In someembodiments, power rail switches 110 comprise semiconductor switchessuch as FETs (Field Effect Transistors).

A FET switch associated with a power rail is typically switched on andoff using discrete components such as RC (resistor/capacitor) networks.FIG. 2 is a circuit diagram illustrating typical circuitry used toperform sleep state 3 power rail switching in a notebook computer. Forexample, the circuitry in the given example is used to control theturn-on of power FETs when waking up from sleep state 3. The power FETsare turned on in a controlled manner in order to mitigate switchingtransients and to limit inrush current magnitude. Typically, the turn-oncontrol of a power FET comprises a delay (e.g., in the range of 1-2 ms)and a ramp up time (e.g., in the range of 1-2 ms). Controlled delays andramp rates are set by the discrete RC elements. In the example of FIG.2, a sleep state control signal (Sleep_(—)3#) as well as non-switchedpower rails (5V, 3.3V, and 1.5V) and corresponding switched power rails(5V_S3, 3.3V_S3, and 1.5V_S3) are depicted. The switched power rails,for example, may comprise supply voltages to a VLSI device supplyingcore voltage, I/O voltage, internal memory array voltage, etc.

Many disadvantages exist in using discrete components to switch powerFETs. For example, the circuitry currently used for power rail switching(e.g., the circuitry of FIG. 2) typically comprises a large number ofdiscrete components, which occupy considerable board space. Moreover,the RC networks used to delay FET turn-on comprise open loops, which mayresult in a non-monotonic application of voltage to a device, whichshould be avoided. As described, potentially detrimental transientsduring turn-on such as current and/or voltage spikes are controlled byselecting appropriate delay and ramp rate values with appropriate R andC values. However, the extent to which power FETs gracefully turn-on isto a large degree a function of the loads on the switched power rails.Thus, whenever changes are made to the load circuit groups, the RC delayand ramp networks need to be re-examined and possibly adjusted bymotherboard designers to assure that the power rails are properlycontrolled during switching. Furthermore, delay and/or ramp times needto be padded to ensure proper operation over varying system conditionsthat may affect the performance and accuracy of various components suchas capacitors, which vary significantly over temperature. In many cases,however, the pad times added to delay and/or ramp times result inunnecessary power consumption and latency. Discrete components alsoconsume substantial power even during quiescent states, i.e., when a FETbeing controlled is fully turned on or off. In order to reduce quiescentstate power consumption, additional transistors and other passivecomponents would need to be added (e.g., to the circuitry of FIG. 2)which would in turn increase the component count, board space, and costof the circuitry. A typical motherboard includes a substantial number ofpower FETs, compounding the complexity.

Improved circuitry for switching transistors (e.g., FETs) is disclosed.The operational amplifier based integrated circuit described herein forswitching a FET eliminates discrete components from a rail switchnetwork and provides an extremely low power, closed loop solution forcontrolling a FET. The FET gate control circuitry described providescontrolled FET on ramp and delay times that are independent of changingload conditions and eliminates the need for delay and ramping pad times,resulting in reduced power consumption and latency during switching.Moreover, specifics in the design result in very low quiescent powerconsumption due to no active power (only leakage) being consumed by thegate control circuitry whenever a FET being controlled is fully turnedon or fully turned off. The quiescent power consumption of someembodiments of these devices, for example, is well below 1 μA.Furthermore, the gate control circuitry described herein provides alower component count, more compact, more reliable, and less costlyalternative to the discrete component network of FIG. 2.

Although many of the examples described herein are with respect to powerrail switching in a computer system, the techniques described herein maybe employed with respect to any application and may be employed tocontrol the switching of any appropriate switching component, i.e., thedescribed techniques are not limited to switching power FETs. Otherpossible applications include, for example, hot-plugging of cables,cards, or modules into connectors or processors in non-stop computingapplications. The described techniques may be employed with respect toany situation in which it is desirable to ensure that power supply tocomponents is applied to devices in a controlled manner so as not tocause system errors.

FIG. 3A is a high level functional block diagram of an embodiment of agate control circuit. Gate control circuit 300 comprises an operationalamplifier based integrated circuit that provides closed loop control ofthe turn on and turn off of an external FET 302. For example, FET 302may comprise an N-channel or a P-channel FET. In the given example, gatecontrol circuit 300 comprises a six pin chip. In some embodiments, FET302 comprises a power rail switch, and gate control circuit 300 isemployed as a control element for switching the power rail. In the givenexample, asserting logic signal 304 from a de-asserted state causesoperational amplifier 306 to begin driving the gate of FET 302 after apre-configured internally controlled delay period expires. That is,voltage is not applied to the gate of FET 302 until after the delayperiod in order to turn on FET 302 in a more controlled manner. Thedelay period is set by internal delay control circuitry (not shown inFIG. 3A) integrated into gate control circuit 300. After the delayperiod expires, the gate voltage is ramped up at a slew rate determinedby internal slew rate control circuitry (not shown in FIG. 3A)integrated into gate control circuit 300. The source voltage (Vs) of FET302 is employed as feedback to operational amplifier 306 to ensure thatsmooth, monotonically increasing voltage is delivered to load 308 at acontrolled rate determined by the internal ramp. Monotonic rise of thesource voltage is maintained while turning on FET 302 even when thesource current increases dramatically after the load device 308 turn-onthreshold voltage is reached and/or load filter capacitors are charged.Load 308 may comprise any device or computer system component, such as agraphics chip, where it is desirable to switch on and off the device'spower source. In the context of power rail switching, gate controlcircuit 300 facilitates monotonically increasing slew up of acorresponding power rail voltage when FET 302 is switched on, e.g., whenload device 308 is powered on or wakened from a sleep state. Operationalamplifier 306 of gate control circuit 300 is designed and/or may beselected to support a wide range of FETs associated with a wide varietyof load conditions and turn-on regimes. In some embodiments, gatecontrol circuit 300 also includes internal discharge control circuitrythat, for example, provides a controlled path to remove charge fromopened power rails and discharge load filter capacitors. De-assertinglogic signal 304 from an asserted state turns off FET 302. The voltageat load 308 is discharged through a discharge control path (not shown inFIG. 3A) internal to gate control circuit 300.

FIG. 3B is a high level functional block diagram of an embodiment of agate control circuit. Gate control circuit 300 of FIG. 3B is similar togate control circuit 300 of FIG. 3A but depicts functional blocks forintegrated delay control, slew rate control, and discharge controlcircuitry. In various embodiments, the delay control, slew rate control,and discharge control circuitry may be implemented in any appropriatemanner. Moreover, the circuitry may be selected and/or configured toprovide any appropriate or desired delay time, slew rate, and/ordischarge rate values. In some embodiments, delay time, slew rate,and/or discharge rate values of a gate control circuit are selectedand/or set during fabrication when the chip is manufactured, e.g., thevalues are mask programmable. Alternatively, in some embodiments, a gatecontrol circuit may be manufactured to support variable and/or ranges ofdelay time, slew rate, and/or discharge rate values, which providesusers with the flexibility of selecting appropriate or desired valuespost-fabrication. In some such cases, for example, user selections maybe programmed into on-chip flash or other non-volatile memory.

Delay control circuitry 320 and slew rate control circuitry 322 of thegate control circuit facilitate a delayed turn on and ramping slew rateof the gate voltage and, in turn, the source voltage. It is alsoimportant for the control circuitry to perform predictably in caseswhere either a drain voltage is not yet present or when power to thecontrol circuitry is applied some time after the control signal ON isasserted. Since the source voltage is applied to load 308, controlledturn on of the source voltage is important to prevent or at leastmitigate voltage and current switching transients. The non-invertinginput of operational amplifier 306 is connected to slew rate controlcircuitry 322, and the inverting input of operational amplifier 306 isconnected to the FET source voltage. Delay control circuitry 320 sets afixed time delay before FET 302 is started to be driven by operationalamplifier 306 through slew rate control circuitry 322, e.g., in responseto logic signal 304 becoming asserted. In some embodiments, delaycontrol circuitry 320 may comprise of digital counters and/orresistor/capacitor based timing elements. The time delay set by delaycontrol circuitry 320 is independent of FET drain voltage (V_(D)), FETsource voltage (V_(S)), and the gate control circuit supply voltage(Vcc). In some embodiments, the time delay is a device configurationparameter. In some such cases, for example, time delay values in therange of 0-100s of microseconds or 0-10s of milliseconds may beselected. At the expiration of the time delay implemented by delaycontrol circuitry 320, operational amplifier 306 begins driving FET 302via application of voltage to the gate of FET 302. In some embodiments,the time delay is not started until a voltage has been placed on thegate of FET 302 to a level above its turn-on threshold. Slew ratecontrol circuitry 322 controls ramp up of the gate voltage, and in turnthe source voltage, of FET 302 as it is turned on. Feedback of thesource voltage into operational amplifier 306 provides closed loopcontrol of the source voltage slew rate during turn-on which isimportant for controlling dv/dt induced transients, i.e., for ensuringthat a smooth, monotonically increasing voltage with little or noovershoot or oscillations is provided to load 308 as well as ensuringthat the current into load 308 does not exhibit massive dv/dt inducedspikes which would occur if the FET were quickly turned on. In someembodiments, slew rate control circuitry 322 may comprise of digitalcounters and/or resistor/capacitor based timing elements. Of course, thetime to slew the source voltage to fully on is a function of the drainsupply voltage. In some embodiments, the slew rate is a deviceconfiguration parameter. In some such cases, for example, source voltageslew rate values in the range of 0.5-8V/ms may be selected. In othercases, much quicker slew rate values on the order of 80V/ms may berequired. The control electronics, therefore, need to be flexible tosupport a wide range of slew rates. To further optimize efficiency, insome embodiments, the gate of FET 302 is driven on to at least aprescribed voltage (e.g., 8V) above the source voltage which issufficient to ensure a substantially low R_(DS-ON) (i.e., FET resistancewhile on). Discharge control circuitry 324 controls discharge of thevoltage at load 308 when FET 302 is turned off, e.g., in response tologic signal 304 becoming de-asserted. In some embodiments, dischargecontrol circuitry 324 may comprise of a current limited path through aninternal resistor to ground. In some embodiments, the discharge rate isa device configuration parameter. In some such cases, dischargeimpedance values ranging from 400-1000Ω equivalent resistance, currentlimited to a prescribed value of 10 to 50 mA or an open may be selected,and the discharge current may be limited to a maximum prescribed value(e.g., 10 mA).

FIG. 3C is a high level functional block diagram of an embodiment of agate control circuit. The operation and circuitry of gate controlcircuit 330 is similar to that described for gate control circuit 300 ofFIGS. 3A-3B. Gate control circuit 330, however, is employed to switch aplurality of FETs 332, which, for example, may be associated with aplurality of power rails. Specifically, gate control circuit 330 in theexample of FIG. 3C controls the simultaneous turn on and turn off ofthree FETs 332(a)-(c). The output 336 of the operational amplifier (notshown in FIG. 3C but similar to operational amplifier 306 in FIGS.3A-3B) of gate control circuit 330 drives the gates of FETs 332, e.g.,at an internally controlled slew rate after the expiration of aninternally set delay period, when logic signal 334 becomes asserted froma de-asserted state. The FET drain connection 335 and FET sourceconnection 337(a) of gate control circuit 330 are connected to the drainand source of the FET with the highest V_(D) voltage, i.e., FET 332(a)in the given example. In some embodiments, only one of the FETs, e.g.,332(a), is ramp controlled. Although the other FETs, e.g., 332(b) and332(c), share the same gate control, their turn on is open loop.Discharge connections 337(a)-(c) of gate control circuit 330 areconnected to the FET sources so that the voltage at each load can bedischarged via an appropriate discharge path (not shown in FIG. 3C) ingate control circuit 330 when logic signal 334 becomes de-asserted froman asserted state.

FIG. 4 is a high level functional block diagram of an embodiment of agate control circuit. Gate control circuit 400 comprises an operationalamplifier based integrated circuit that provides closed loop control ofthe turn on and turn off of an external FET 402. For example, FET 402may comprise an N-channel or a P-channel FET. In the given example, gatecontrol circuit 400 comprises an eight pin chip. In some embodiments,FET 402 comprises a power rail switch, and gate control circuit 400 isemployed as a control element for switching the power rail. Gate controlcircuit 400 of FIG. 4 is similar to gate control circuit 300 of FIGS.3A-3B and/or 330 of FIG. 3C but includes charge pump boost circuitry 403to locally generate gate voltage. External FET 402, for example, mayswitch a high voltage rail. If the gate control circuit 400 supplyvoltage (Vcc) is not sufficient to supply the requisite gate drive, theinternal voltage boost supply is employed to obtain the voltage neededto drive the gate during turn-on of FET 402. In some embodiments, localgeneration of the gate voltage is achieved using charge pump circuitry403 integrated into gate control circuit 400 to generate the voltageneeded to drive the FET gate. In some such cases, charge pump 403 isactivated only when needed to generate the required gate drive voltagefrom the available supply voltage (Vcc). This technique is especiallyadvantageous when driving N-Channel MOSFET switches, where it isnecessary to apply a higher voltage value to the gate than the voltagevalue on the source in order to turn on the FET.

Techniques that increase the efficiency of integrated charge pump powersupplies used in gate control circuitry are useful. The efficiency of acharge pump may be increased, for example, by reducing the amount ofcharge needed to be pumped into the charge pump storage capacitor toachieve the required voltage when needed to drive the gate of a FET.That is, it may be useful to shorten the time it takes to bring a chargepump, e.g., charge pump 403, up to a desired high voltage value to beable to sufficiently apply V_(GS) to achieve low R_(DS-ON). In someembodiments, gate control circuit 400 includes circuitry to pre-chargethe charge pump storage capacitor(s) to an appropriate voltage level tominimize or at least reduce the amount of additional charge, if any,required for the voltage necessary to drive the FET gate to the desiredlevel. In some embodiments, a gate control circuit includes circuitrythat selects the most appropriate voltage available to the gate controlcircuit (e.g., either the gate control circuit supply voltage or the FETdrain voltage) as the pre-charge voltage of the charge pump storagecapacitor such that a minimum additional amount of charge needs to beadded to the charge pump storage capacitor to reach the level requiredto drive the gate of the FET. In some embodiments, the implication ofbeing able to pre-charge the charge pump storage capacitor allows theuse of a smaller pre-charge storage capacitor thus saving space andcost.

Consider, for example, that a gate control circuit is used to control anN-Channel MOSFET that is used to switch a 12V bus. In this example, the12V bus is connected to the drain of the FET, and the source of the FETis connected to a load. From a performance curve of the FET, it may bedetermined that the gate control circuitry must supply 20V to achieve aV_(GS) sufficient to achieve a minimum R_(DS-ON). If the supply voltageof the gate control circuitry is 5V and if the charge pump uses thesupply voltage as the initial pre-charge voltage level on the chargepump storage capacitor, then the storage capacitor of the charge pumpmust be pumped up an additional 15V to reach the required 20V needed.If, however, the pre-charge voltage of the storage capacitor was 12V(i.e., the drain voltage) instead of 5V, the charge pump would only needto add an additional 8V to reach the required level of 20V. Thus, inthis example, it is more efficient to use the drain voltage topre-charge the charge pump storage capacitor to 12V.

Although not depicted in FIG. 4, gate control circuit 400 includes delaycontrol, slew rate control, and/or discharge rate control circuitry asdescribed above with respect to FIGS. 3A-3C. The operation of gatecontrol circuit 400 is similar to that described for the gate controlcircuits of FIGS. 3A-3C. As is the case where a charge pump is notintegrated, it is important for the control circuitry to performpredictably in cases where either a drain voltage is not yet present orwhen power to the control circuitry is applied some time after thecontrol signal ON is asserted. When logic signal 404 is asserted from ade-asserted state, voltage is not applied to the gate of FET 402 untilexpiration of an internally controlled delay period which is set byinternal delay control circuitry such as delay control circuitry 320 ofFIG. 3B. After the delay period, operational amplifier 406 beginsdriving FET 402 via application of voltage to the gate of FET 402.Internal slew rate control circuitry, such as slew rate controlcircuitry 322 of FIG. 3B, controls ramp up of the gate voltage, and inturn the source voltage, of FET 402 as it is turned on. Closed-loopcontrol of FET 402 is facilitated by feedback of the source voltage intooperational amplifier 406. The controlled turn-on of FET 402 results ina controlled, monotonic rise in the load supplying source voltage. Insome embodiments, the delay period and/or slew rate are deviceconfiguration parameters. In some such cases, for example, delay valuesin the range of 0-3 ms may be selected, and/or source voltage slew ratevalues in the range of 0.8-8V/ms may be selected. In some embodiments,gate control circuit 400 also includes internal discharge controlcircuitry, such as discharge control circuitry 324 of FIG. 3B, thatcontrols discharge of the voltage at load 408 when FET 402 is turnedoff, e.g., in response to logic signal 404 becoming de-asserted and/orshut down signal 405 (SHDN#) becoming asserted. In the example of FIG.4, shut down signal 405 of gate control circuit 400 provides anasynchronous override to ON signal 404. Although not depicted in thegiven figures, gate control circuit 300 of FIGS. 3A-3B and/or 330 ofFIG. 3C may also include such an asynchronous shut down signal. In someembodiments, the discharge rate is a device configuration parameter. Insome such cases, discharge impedance values ranging from 400-1000Ωequivalent resistance, current limited to a prescribed value of 10 to 50mA or an open may be selected, and the discharge current may be limitedto a maximum prescribed value (e.g., 10 mA).

As depicted in FIG. 4, gate control circuit 400 also includes faultprotection circuitry 410. Fault protection circuitry 410 may includecircuitry to detect and protect against one or more potential faultconditions. In the given example, fault protection circuitry 410includes under voltage lock out and over current/temperature shut downcircuitry. Under voltage lock out circuitry prevents the device fromoperating if the device supply voltage (Vcc) is below a prescribed value(e.g., 3.5V). Over current detection circuitry protects against shortcircuit conditions on the load side of a driven (i.e., on) FET. In someembodiments, the over current detection circuitry monitors the voltagedifference between the drain and the source and shuts down the device ifV_(DS-ON) exceeds a prescribed value (e.g., 150 mV, such as 50 A across3 mΩ). Similarly, over temperature detection circuitry shuts down thedevice if the operating temperature exceeds a prescribed value. Invarious embodiments, once a gate control circuit is shut down due to afault condition, logic signal 404 must be de-asserted and thenre-asserted or Vcc must be turned on or off to clear the faultcondition. Although not depicted in the given figures, gate controlcircuit 300 of FIGS. 3A-3B and/or 330 of FIG. 3C may also includesimilar fault protection circuitry.

In some embodiments, a gate control circuit outputs a power good (PG)signal such as PG signal 312 of FIG. 3B and 412 of FIG. 4. In some suchcases, after the gate voltage has ramped up and reached its maximumsteady state value, the open drain PG signal is asserted. In someembodiments, the PG signal is employed for power-on sequence control ofa plurality of switched power rails, e.g., to improve reliability byensuring that various power rails are turned on in a controlled sequenceand to reduce power-on surge current. In such cases, the PG outputs of aseries of gate control circuits are used to daisy chain the turn-on of aseries of corresponding power FETs. In such a configuration, forexample, the PG output of a first gate control circuit is used as the ONinput of a second gate control circuit and so on. FIG. 5 is a high levelfunctional block diagram of an embodiment of a plurality of gate controlcircuits 502-506 daisy chained together. As depicted, the PG signaloutput by one gate control circuit is input as the ON signal of a nextgate control circuit so that corresponding power rails are sequentiallyswitched. In some embodiments, PG signals associated with a plurality ofswitched power rails are used in a “wired AND” configuration, e.g., toindicate that all are in a power good condition. Although not depictedin the given figures, gate control circuit 300 of FIG. 3A and/or 330 ofFIG. 3C may also include a PG output signal.

Some embodiments of the gate control circuitry described herein resultin very low quiescent power consumption. In some cases, no active powerbut only minor leakage power is consumed when a FET being controlled iseither fully turned on or fully turned off In some embodiments, a latchis employed at the output of the operational amplifier to hold the gatedrive voltage either at an on voltage level or at an off voltage level,which results in no active power consumption when the FET is fully on oroff. During turn-on, on-chip logic circuitry senses when the FET beingdriven is fully turned on, e.g., by monitoring the voltage differencebetween the FET drain and source; latches the output of the operationalamplifier when it is determined that the FET is fully turned on tomaintain the required gate drive voltage level; and shuts down all othernon-essential circuitry in the chip. The latched output can easilysupply the small leakage current (e.g., on the order of 100 nA) requiredto keep the FET turned on. FIG. 6 is a high level functional blockdiagram of an embodiment of a portion of the timing and logic circuitryof a gate control circuit. Timing and logic circuitry 600 may comprise,for example, timing and logic circuitry 315 of FIGS. 3A-3B and 415 ofFIG. 4. One of the functions of timing and logic circuitry 600 is tosense when the FET 602 being controlled is fully turned on. In the givenexample, comparator 604 is employed to compare the voltage differencebetween the drain and source of FET 602. Timing and logic circuitry 600senses that the FET is fully turned on when the voltage differenceacross the FET after ramp up is very small, i.e., V_(DS-ON) is below aprescribed value. When it is determined that the FET is fully turned on,the gate voltage 606 supplied to FET 602 is latched, i.e., latch 608 isset, to supply the small amount of leakage current required to keep theFET turned on, and the remaining circuitry of the gate control circuitis shut down. Similarly, when the FET is turned off, the output of theoperation amplifier is latched, i.e., latch 608 is set, to hold the gatevoltage at an off voltage level, and unused circuitry is completelyshutdown to eliminate leakage current in sleep, hibernate, and otherpower saving modes. Thus, in some embodiments, active power is onlyconsumed by the gate control circuit during gate drive, i.e., duringramp up and ramp down, when the output of the operational amplifier isnot latched; and latching the output of the operational amplifier whenthe FET being controlled is fully turned on or turned off results in noactive power consumption.

In various embodiments, one or more other circuits, components, and/orstructures may be packaged with a gate control circuit in the sameintegrated circuit chip. In some embodiments, a (power) FET is packagedwith a gate control circuit, e.g., in a dual die package assembly.Combining a gate control circuit with the FET that it controls in thesame integrated circuit, for example, results in fewer components,traces, and vias on the motherboard of a computer system and assuresmore predictable switching performance and noise immunity due to muchshorter connections. FIG. 7A is a high level functional block diagram ofan embodiment of an integrated circuit that includes both a gate controlcircuit and the FET that it controls. FIG. 7B illustrates an embodimentof the manner in which two die—a FET and a gate control circuit—arepackaged in the same chip. The FET and the gate control circuit in FIGS.7A-7B may be connected via any combination of internal and/or externalconnections. For example, wire bonding techniques may be employed forinternal connections.

In general, FETs are notoriously inaccurate devices whose performanceparameters vary significantly across devices. Optimization of theperformance of a FET is achievable by determining various parameters ofthe FET and customizing its drive profile accordingly. In someembodiments, a FET is tested to determine its actual parameters (e.g.,on-impedance, input capacitance, gate turn-on threshold, etc.) so that acustom drive profile can be selected for the gate control circuitcontrolling the FET. In the cases in which the FET is included with thegate control circuit in a hybrid package, for example, testing of theFET is possible during or after manufacturing. In some embodiments, oneor more drive profile parameters, FET parameters, and/or otherassociated data are programmed into non-volatile memory included in thegate control circuit and/or associated integrated circuit.

In some cases, it may be desirable to measure the current through a FET.For example, the currents running through high current power FETs may beon the order of 10-100 A or more, and it may be desirable in suchconfigurations to ensure that load devices are protected from overcurrent conditions. In various embodiments, current may be measured inany appropriate manner, e.g., by dividing voltage by resistance. Forexample, the voltage through a FET and the impedance of the FET may beemployed to determine the current through the FET. In such cases, forinstance, a one-time measurement of the impedance (e.g., R_(DS-ON)) of aFET may be programmed into non-volatile memory, and the real timevoltage (e.g., V_(DS)) across the FET may be measured by circuitryincluded in the gate control circuit to determine the real time currentthrough the FET. With respect to FIG. 7B, the illustrated integratedcircuit includes additional structures and/or circuits to measurecurrent. As depicted, a current measurement shunt is constructed betweenpin 1 and pin 2, e.g., by connecting a lead frame metal strap betweenthe two pins. A one-time measurement of the resistance or impedancebetween the pins can be programmed into on-chip non-volatile memory. Inthe given example, pin D1 and pin D2 of the gate control circuit connectto internal circuits within the gate control circuit that measure thereal time voltage drop across the shunt structure which is used with theresistance between the pins to determine the real time current flowingthrough the FET.

Although the integrated circuits of the given examples depict only asingle gate control circuit and/or FET, in various embodiments, anintegrated circuit may include any number of gate control circuits,FETs, and/or other components, circuits, and/or structures. Moreover, agate control circuit may include any combination of any otherappropriate components, circuits, and/or structures in addition toand/or instead of those described herein.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, the invention is not limitedto the details provided. There are many alternative ways of implementingthe invention. The disclosed embodiments are illustrative and notrestrictive.

1. An integrated circuit for switching a transistor, comprising: anoperational amplifier configured to drive the transistor; and slew ratecontrol circuitry configured to control slew rate of the transistorsource voltage during turn on; wherein the transistor source voltage isemployed as feedback to the operational amplifier to facilitate closedloop control of the transistor source voltage during switching of thetransistor.
 2. The integrated circuit of claim 1, wherein theoperational amplifier is configured to drive the transistor in responseto an input signal.
 3. The integrated circuit of claim 1, furthercomprising delay control circuitry configured to set a delay period andwherein the operational amplifier is configured to not begin driving thetransistor until after expiration of the delay period.
 4. The integratedcircuit of claim 1, further comprising discharge control circuitryconfigured to provide a discharge path for the transistor source voltagewhen the transistor is switched off.
 5. The integrated circuit of claim1, further comprising a charge pump configured to generate a requisitegate drive voltage for the transistor.
 6. The integrated circuit ofclaim 5, further comprising circuitry to pre-charge a storage capacitorof the charge pump.
 7. The integrated circuit of claim 1, furthercomprising fault protection circuitry for detecting and protectingagainst one or more fault conditions.
 8. The integrated circuit of claim7, wherein the fault protection circuitry includes one or more of: undervoltage lock out circuitry, over current shut down circuitry, and overtemperature shut down circuitry.
 9. The integrated circuit of claim 1,wherein an output of the operational amplifier is input into a latch andwherein an output of the latch is connected to the transistor gate. 10.The integrated circuit of claim 9, wherein the latch is set when thetransistor is fully turned on or fully turned off.
 11. The integratedcircuit of claim 9, wherein a latched output of the operationalamplifier holds a gate drive voltage of the transistor at an on voltagelevel or at an off voltage level and consumes no active power.
 12. Theintegrated circuit of claim 1, wherein the integrated circuit consumesactive power while switching on or switching off the transistor but notduring quiescent states of the transistor.
 13. The integrated circuit ofclaim 1, wherein the transistor comprises one of a plurality oftransistors controlled by the integrated circuit.
 14. The integratedcircuit of claim 1, wherein the integrated circuit outputs a power goodsignal which indicates when the transistor gate voltage has reached amaximum steady state value.
 15. The integrated circuit of claim 1,wherein the integrated circuit is part of a series of integratedcircuits daisy chained together to facilitate sequential switching of aseries of associated power rails.
 16. The integrated circuit of claim 1,wherein the transistor is included in the integrated circuit.
 17. Theintegrated circuit of claim 1, wherein the integrated circuit includescircuitry to determine a current across the transistor.
 18. Theintegrated circuit of claim 1, wherein the transistor comprises a FieldEffect Transistor (FET).
 19. The integrated circuit of claim 1, whereinthe transistor comprises a power rail switch.
 20. The integrated circuitof claim 1, wherein the integrated circuit comprises a gate driver ofthe transistor.
 21. A method for switching a transistor, comprising:configuring an operational amplifier to drive the transistor; andconfiguring slew rate control circuitry to control slew rate of thetransistor source voltage during turn on; wherein the transistor sourcevoltage is employed as feedback to the operational amplifier tofacilitate closed loop control of the transistor source voltage duringswitching of the transistor.